The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Mar. 31, 2011
Yu-lien Huang, Jhubei, TW;
Chia-pin Lin, Xinpu Township, TW;
Sheng-hsiung Wang, Zhubei, TW;
Fan-yi Hsu, Toufen Town, TW;
Chun-liang Tai, Hsinchu, TW;
Yu-Lien Huang, Jhubei, TW;
Chia-Pin Lin, Xinpu Township, TW;
Sheng-Hsiung Wang, Zhubei, TW;
Fan-Yi Hsu, Toufen Town, TW;
Chun-Liang Tai, Hsinchu, TW;
Abstract
The embodiments of methods and structures disclosed herein provide mechanisms of performing doping an inter-level dielectric film, ILD, surrounding the gate structures with a dopant to reduce its etch rates during the processes of removing dummy gate electrode layer and/or gate dielectric layer for replacement gate technologies. The ILDfilm may be doped with a plasma doping process (PLAD) or an ion beam process. Post doping anneal is optional.