The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Feb. 03, 2012
Masaru Kito, Yokohama, JP;
Ryota Katsumata, Yokohama, JP;
Masaru Kidoh, Komae, JP;
Hiroyasu Tanaka, Minato-ku, JP;
Yoshiaki Fukuzumi, Yokohama, JP;
Hideaki Aochi, Kawasaki, JP;
Yasuyuki Matsuoka, Yokohama, JP;
Masaru Kito, Yokohama, JP;
Ryota Katsumata, Yokohama, JP;
Masaru Kidoh, Komae, JP;
Hiroyasu Tanaka, Minato-ku, JP;
Yoshiaki Fukuzumi, Yokohama, JP;
Hideaki Aochi, Kawasaki, JP;
Yasuyuki Matsuoka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.