The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Feb. 23, 2011
Applicants:

Dmytro Apalkov, San Jose, CA (US);

Xueti Tang, Fremont, CA (US);

Vladimir Nikitin, Campbell, CA (US);

Alexander A. G. Driskill-smith, Redwood City, CA (US);

Steven M. Watts, Mountain View, CA (US);

David Druist, Santa Clara, CA (US);

Inventors:

Dmytro Apalkov, San Jose, CA (US);

Xueti Tang, Fremont, CA (US);

Vladimir Nikitin, Campbell, CA (US);

Alexander A. G. Driskill-Smith, Redwood City, CA (US);

Steven M. Watts, Mountain View, CA (US);

David Druist, Santa Clara, CA (US);

Assignee:

Grandis, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.


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