The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Oct. 30, 2009
Masashi Sugishita, Toyama, JP;
Masaaki Ueno, Toyama, JP;
Tsukasa Iida, Toyama, JP;
Susumu Nishiura, Toyama, JP;
Masao Aoyama, Toyama, JP;
Kenichi Fujimoto, Toyama, JP;
Yoshihiko Nakagawa, Toyama, JP;
Hiroyuki Mitsui, Toyama, JP;
Masashi Sugishita, Toyama, JP;
Masaaki Ueno, Toyama, JP;
Tsukasa Iida, Toyama, JP;
Susumu Nishiura, Toyama, JP;
Masao Aoyama, Toyama, JP;
Kenichi Fujimoto, Toyama, JP;
Yoshihiko Nakagawa, Toyama, JP;
Hiroyuki Mitsui, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers. Product and filler wafers are accommodated and heat-treated in the reaction vessel while controlling a heating unit using calculation results obtained using at least the calculation parameter and deviation between a set temperature and a temperature detected in the heating unit by a temperature detector.