Company Filing History:
Years Active: 2013-2018
Title: Susumu Nishiura: Innovator in Substrate Processing Technology
Introduction
Susumu Nishiura is a prominent inventor based in Toyama, Japan. He has made significant contributions to the field of substrate processing technology, particularly in the semiconductor industry. With a total of 3 patents to his name, Nishiura's work has been instrumental in advancing the efficiency and effectiveness of substrate processing apparatus.
Latest Patents
Nishiura's latest patents include innovative technologies such as a substrate processing apparatus, a method of controlling the substrate processing apparatus, and a method of maintaining the substrate processing apparatus. His substrate processing apparatus features an operation unit equipped with a storage unit that holds multiple recipes for processing components within a reactor. This apparatus also includes a display unit for setting conditions and a control unit that executes recipes based on these conditions. Additionally, he has developed a method for automatically setting process parameters according to the number of substrates being processed, enhancing the adaptability of the processing system.
Career Highlights
Throughout his career, Nishiura has been associated with Hitachi Kokusai Electric Inc., where he has played a vital role in the development of advanced semiconductor manufacturing technologies. His expertise in substrate processing has positioned him as a key figure in the industry, contributing to the evolution of semiconductor devices.
Collaborations
Nishiura has collaborated with notable colleagues such as Hiroyuki Mitsui and Kaori Inoshima. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.
Conclusion
Susumu Nishiura's contributions to substrate processing technology have made a lasting impact on the semiconductor industry. His innovative patents and collaborative efforts continue to drive advancements in this critical field.