The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Sep. 09, 2011
Kevin K. Chan, Yorktown Heights, NY (US);
Thomas Safron Kanarsky, Hopewell Junction, NY (US);
Jinghong LI, Hopewell Junction, NY (US);
Christine Qiqing Ouyang, Yorktown Heights, NY (US);
Dae-gyu Park, Hopewell Junction, NY (US);
Zhibin Ren, Hopewell Junction, NY (US);
Xinhui Wang, Yorktown Heights, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Kevin K. Chan, Yorktown Heights, NY (US);
Thomas Safron Kanarsky, Hopewell Junction, NY (US);
Jinghong Li, Hopewell Junction, NY (US);
Christine Qiqing Ouyang, Yorktown Heights, NY (US);
Dae-Gyu Park, Hopewell Junction, NY (US);
Zhibin Ren, Hopewell Junction, NY (US);
Xinhui Wang, Yorktown Heights, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.