The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
May. 16, 2007
Nobutoshi Fujii, Ibaraki, JP;
Takahiro Nakayama, Ibaraki, JP;
Kazuo Kohmura, Chiba, JP;
Hirofumi Tanaka, Chiba, JP;
Nobutoshi Fujii, Ibaraki, JP;
Takahiro Nakayama, Ibaraki, JP;
Kazuo Kohmura, Chiba, JP;
Hirofumi Tanaka, Chiba, JP;
Ulvac, Inc., Chigasaki-shi, JP;
Abstract
Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR)and a compound represented by the formula R(Si)(OR)(in the formulas Rrepresents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rrepresents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, Rand Rmay be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.