The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Nov. 25, 2008
Hiroyuki Matsuura, Oshu, JP;
Toshiki Takahashi, Oshu, JP;
Jun Sato, Kai, JP;
Katsuyoshi Aikawa, Kai, JP;
Katsutoshi Ishii, Kai, JP;
Hiroyuki Matsuura, Oshu, JP;
Toshiki Takahashi, Oshu, JP;
Jun Sato, Kai, JP;
Katsuyoshi Aikawa, Kai, JP;
Katsutoshi Ishii, Kai, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.