The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jul. 13, 2010
Yu-fong Huang, Tainan, TW;
Teng-hao Yeh, Hsinchu, TW;
Miao-chih Hsu, Taichung, TW;
Tzung-ting Han, Yilan County, TW;
Yu-Fong Huang, Tainan, TW;
Teng-Hao Yeh, Hsinchu, TW;
Miao-Chih Hsu, Taichung, TW;
Tzung-Ting Han, Yilan County, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of operating a memory cell is provided. The memory cell has first, second, third and fourth storage regions in a charge-storage layer between a substrate and a word line. The first and second storage regions are respectively adjacent to lower and upper portions at one side of the protruding part of the substrate, and the third and fourth storage regions are respectively adjacent to lower and upper portions at the other side of the same. The second and third storage regions are regarded as a top storage region. When the top storage region is programmed, a first positive voltage is applied to the word line, a second positive voltage is applied to a top bit line in a top portion of the protruding part, and a bottom voltage is applied to first and second bottom bit lines in the substrate beside the protruding part respectively.