The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Oct. 27, 2010
Applicants:

Kwang-jin Moon, Suwon-si, KR;

Pil-kyu Kang, Anyang-si, KR;

Dae-lok Bae, Seoul, KR;

Gil-heyun Choi, Seoul, KR;

Byung-lyul Park, Seoul, KR;

Dong-chan Lim, Suwon-si, KR;

Deok-young Jung, Seoul, KR;

Inventors:

Kwang-Jin Moon, Suwon-si, KR;

Pil-Kyu Kang, Anyang-si, KR;

Dae-Lok Bae, Seoul, KR;

Gil-Heyun Choi, Seoul, KR;

Byung-Lyul Park, Seoul, KR;

Dong-Chan Lim, Suwon-si, KR;

Deok-Young Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.


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