The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jul. 05, 2011
Applicants:
Mohamed N. Darwish, Campbell, CA (US);
Jun Zeng, Torrance, CA (US);
Richard A. Blachard, Los Altos, CA (US);
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Jun Zeng, Torrance, CA (US);
Richard A. Blachard, Los Altos, CA (US);
Assignee:
MaxPower Semiconductor, Inc., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.