The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 20, 2009
Ming-hsing Liu, Tainan, TW;
Chia-hsiun Yu, Tainan, TW;
Ming-Hsing Liu, Tainan, TW;
Chia-Hsiun Yu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The present invention provides a fabrication method of an opening. The method includes providing a substrate having a conductive region therein. Thereafter, a dielectric layer is formed over the substrate and then a stacked layer is formed on the dielectric layer. The stacked layer includes a patterned metal hard mask layer, a patterned silicon oxynitride layer and a patterned silicon oxide layer on the dielectric layer in sequence. Afterward, a first portion of the dielectric layer is removed using the stacked layer as a first mask to form a first opening that exposes a surface of the conductive region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile