The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Feb. 18, 2010
Hiromasa Mochiki, Yamanashi, JP;
Yoshinobu Ooya, Yamanashi, JP;
Fumio Yamazaki, Yamanashi, JP;
Toshio Haga, Yamanashi, JP;
Hiromasa Mochiki, Yamanashi, JP;
Yoshinobu Ooya, Yamanashi, JP;
Fumio Yamazaki, Yamanashi, JP;
Toshio Haga, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.