The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Oct. 09, 2008
Masahiko Nakayama, Yokohama, JP;
Kay Yakushiji, Tsukuba, JP;
Sumio Ikegawa, Musashino, JP;
Shinji Yuasa, Tsukuba, JP;
Tadashi Kai, Tokyo, JP;
Toshihiko Nagase, Sagamihara, JP;
Minoru Amano, Sagamihara, JP;
Hisanori Aikawa, Yokohama, JP;
Tatsuya Kishi, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Masahiko Nakayama, Yokohama, JP;
Kay Yakushiji, Tsukuba, JP;
Sumio Ikegawa, Musashino, JP;
Shinji Yuasa, Tsukuba, JP;
Tadashi Kai, Tokyo, JP;
Toshihiko Nagase, Sagamihara, JP;
Minoru Amano, Sagamihara, JP;
Hisanori Aikawa, Yokohama, JP;
Tatsuya Kishi, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.