The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jun. 08, 2011
Chen-liang Chu, Hsin-Chu, TW;
Chun-ting Liao, Hsin-Chu, TW;
Fei-yuh Chen, Hsinchu, TW;
Tsung-yi Huang, Hsin-Chu, TW;
Chen-Liang Chu, Hsin-Chu, TW;
Chun-Ting Liao, Hsin-Chu, TW;
Fei-Yuh Chen, Hsinchu, TW;
Tsung-Yi Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the semiconductor substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.