The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Apr. 30, 2012
Shu-wei Chung, Taichung, TW;
Kuo-feng Yu, Hsin-Chu, TW;
Shyue-shyh Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes providing a substrate comprising a first device region and a second device region; forming an oxide cap over the substrate and in the first device region and the second device region; forming a first metal layer over the oxide cap, wherein the first metal layer has a first portion in the first device region and a second portion in the second device region; forming a mask to cover the second portion of the first metal layer, wherein the first portion of the first metal layer is exposed; removing the first portion of the first metal layer and the oxide cap from the first device region; removing the mask; and forming a second metal layer in the first device region and the second device region, wherein the second metal layer in the second device region is over the second portion of the first metal layer.