The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Apr. 16, 2010
Chun-fai Cheng, Hsin-Chu, TW;
Ka-hing Fung, Hsin-Chu, TW;
Han-ting Tsai, Kaoshiung, TW;
Ming-huan Tsai, Hsin-Chu, TW;
Wei-han Fan, Hsin-Chu, TW;
Hsueh-chang Sung, Zhubei, TW;
Haiting Wang, Hsin-Chu, TW;
Wei-yuan LU, Taipei, TW;
Hsien-ching Lo, Taoyuan, TW;
Kuan-chung Chen, Taipei, TW;
Chun-Fai Cheng, Hsin-Chu, TW;
Ka-Hing Fung, Hsin-Chu, TW;
Han-Ting Tsai, Kaoshiung, TW;
Ming-Huan Tsai, Hsin-Chu, TW;
Wei-Han Fan, Hsin-Chu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Haiting Wang, Hsin-Chu, TW;
Wei-Yuan Lu, Taipei, TW;
Hsien-Ching Lo, Taoyuan, TW;
Kuan-Chung Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having a strained channel and a method of manufacture thereof is provided. The semiconductor device has a gate electrode formed over a channel recess. A first recess and a second recess formed on opposing sides of the gate electrode are filled with a stress-inducing material. The stress-inducing material extends into an area wherein source/drain extensions overlap an edge of the gate electrode. In an embodiment, sidewalls of the channel recess and/or the first and second recesses may be along {111} facet planes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile