The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Oct. 22, 2008
Harry Chuang, Hsin-Chu, TW;
Tzung-chi Lee, Banciao, TW;
Kong-beng Thei, Hsin-Chu, TW;
Sheng-chen Chung, Jhubei, TW;
Mong-song Liang, Hsin-Chu, TW;
Harry Chuang, Hsin-Chu, TW;
Tzung-Chi Lee, Banciao, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Sheng-Chen Chung, Jhubei, TW;
Mong-Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device is provided which includes a semiconductor substrate having a first region and a second region, transistors having metal gates formed in the first region, and at least one capacitor formed in the second region. The capacitor includes a top electrode having at least one stopping structure formed in the top electrode, the at least one stopping structure being of a different material from the top electrode, a bottom electrode, and a dielectric layer interposed between the top electrode and the bottom electrode.