The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Sep. 12, 2008
Yasushi Okubo, Shinjuku, JP;
Masahiro Hashimoto, Shinjuku, JP;
Toshiyuki Suzuki, Shinjuku, JP;
Takayuki Ohnishi, Numazu, JP;
Hirohito Anze, Numazu, JP;
Hitoshi Sunaoshi, Numazu, JP;
Takashi Kamikubo, Numazu, JP;
Yasushi Okubo, Shinjuku, JP;
Masahiro Hashimoto, Shinjuku, JP;
Toshiyuki Suzuki, Shinjuku, JP;
Takayuki Ohnishi, Numazu, JP;
Hirohito Anze, Numazu, JP;
Hitoshi Sunaoshi, Numazu, JP;
Takashi Kamikubo, Numazu, JP;
Hoya Corporation, Tokyo, JP;
Nuflare Technology, Inc., Shizuoka, JP;
Abstract
A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.