The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
May. 04, 2011
Hsueh-i Huang, Hsinchu, TW;
Chien-wen Chu, Hsinchu, TW;
Cheng-chi Lin, Hsinchu, TW;
Shih-chin Lien, Hsinchu, TW;
Chin-pen Yeh, Hsinchu, TW;
Shyi-yuan Wu, Hsinchu, TW;
Hsueh-I Huang, Hsinchu, TW;
Chien-Wen Chu, Hsinchu, TW;
Cheng-Chi Lin, Hsinchu, TW;
Shih-Chin Lien, Hsinchu, TW;
Chin-Pen Yeh, Hsinchu, TW;
Shyi-Yuan Wu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.