The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jan. 10, 2005
Kwang-myung Lee, Suwon, KR;
Ki-young Yun, Suwon, KR;
Il-kyoung Kim, Suwon, KR;
Sung-wook Park, Suwon, KR;
Seung-ki Chae, Suwon, KR;
No-hyun Huh, Suwon, KR;
Jae-wook Kim, Suwon, KR;
Jae-hyuck an, Suwon, KR;
Woo-seok Kim, Suwon, KR;
Myeong-jin Kim, Suwon, KR;
Kyoung-ho Jang, Suwon, KR;
Shinji Yanagisawa, Towada, JP;
Kengo Tsutsumi, Susono, JP;
Seiichi Takahashi, Ishioka, JP;
Kwang-Myung Lee, Suwon, KR;
Ki-Young Yun, Suwon, KR;
Il-Kyoung Kim, Suwon, KR;
Sung-Wook Park, Suwon, KR;
Seung-Ki Chae, Suwon, KR;
No-Hyun Huh, Suwon, KR;
Jae-Wook Kim, Suwon, KR;
Jae-Hyuck An, Suwon, KR;
Woo-Seok Kim, Suwon, KR;
Myeong-Jin Kim, Suwon, KR;
Kyoung-Ho Jang, Suwon, KR;
Shinji Yanagisawa, Towada, JP;
Kengo Tsutsumi, Susono, JP;
Seiichi Takahashi, Ishioka, JP;
Samsung Electronics Co., Ltd, Suwon, KR;
Ulvac, Inc., Chigasaki-Shi, JP;
Abstract
A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.