The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Dec. 11, 2008
Applicants:

Dae Hyeong Kim, Anseong-si, KR;

Seok Min Hong, Anseong-Si, KR;

Jae Hyun Jeon, Kimcheon-Si, KR;

Un Gyu Park, Seoul, KR;

Jea Gun Park, Seongnam-Si, KR;

Yong Kuk Kim, Seoul, KR;

Inventors:

Dae Hyeong Kim, Anseong-si, KR;

Seok Min Hong, Anseong-Si, KR;

Jae Hyun Jeon, Kimcheon-Si, KR;

Un Gyu Park, Seoul, KR;

Jea Gun Park, Seongnam-Si, KR;

Yong Kuk Kim, Seoul, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24D 3/02 (2006.01); C09C 1/68 (2006.01); C09K 3/14 (2006.01); C09K 13/00 (2006.01); H01L 21/302 (2006.01); C09G 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.


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