The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Dec. 13, 2005
Dae-han Choi, Fremont, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Eric Hudson, Berkeley, CA (US);
Sangheon Lee, Dublin, CA (US);
Conan Chiang, Fremont, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Dae-han Choi, Fremont, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Eric Hudson, Berkeley, CA (US);
Sangheon Lee, Dublin, CA (US);
Conan Chiang, Fremont, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.