The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Jun. 13, 2011
Chun-min Wang, Taichung, TW;
An-chi Liu, Tainan, TW;
Hsin-hsing Chen, Tainan, TW;
Chih-chun Wang, Tainan, TW;
Chun-Min Wang, Taichung, TW;
An-Chi Liu, Tainan, TW;
Hsin-Hsing Chen, Tainan, TW;
Chih-Chun Wang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A stress film forming method is used in a fabrication process of a semiconductor device. Firstly, a substrate is provided, wherein a first-polarity-channel MOSFET and a second-polarity-channel MOSFET are formed on the substrate. Then, at least one deposition-curing cycle process is performed to form a cured stress film over the first-polarity-channel MOSFET and the second-polarity-channel MOSFET. Afterwards, an additional deposition process is performed form a non-cured stress film on the cured stress film, wherein the cured stress film and the non-cured stress film are collectively formed as a seamless stress film.