The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Apr. 25, 2012
Hang Yu, Woodland, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Man-ping Cai, Saratoga, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
LI Yan Miao, San Francisco, CA (US);
Siu F. Cheng, Los Angeles, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Sohyun Park, Fremont, CA (US);
Heung Lak Park, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Hang Yu, Woodland, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Man-Ping Cai, Saratoga, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Li Yan Miao, San Francisco, CA (US);
Siu F. Cheng, Los Angeles, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Sohyun Park, Fremont, CA (US);
Heung Lak Park, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.