The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Aug. 18, 2010
Maciej Wiatr, Dresden, DE;
Markus Forsberg, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Roman Boschke, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Markus Forsberg, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Roman Boschke, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Material erosion of trench isolation structures in advanced semiconductor devices may be reduced by incorporating an appropriate mask layer stack in an early manufacturing stage. For example, a silicon nitride material may be incorporated as a buried etch stop layer prior to a sequence for patterning active regions and forming a strain-inducing semiconductor alloy therein, wherein, in particular, the corresponding cleaning process prior to the selective epitaxial growth process has been identified as a major source for causing deposition-related irregularities upon depositing the interlayer dielectric material.