The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Apr. 27, 2010
Maya Angelova Doytcheva, Eindhoven, NL;
Mircea Dusa, Wezembeek-Oppem, BE;
Richard Johannes Franciscus Van Haren, Waalre, NL;
Harry Sewell, Ridgefield, CT (US);
Robertus Wilhelmus Van Der Heijden, Tilburg, NL;
Maya Angelova Doytcheva, Eindhoven, NL;
Mircea Dusa, Wezembeek-Oppem, BE;
Richard Johannes Franciscus Van Haren, Waalre, NL;
Harry Sewell, Ridgefield, CT (US);
Robertus Wilhelmus Van Der Heijden, Tilburg, NL;
ASML Netherlands B.V., Veldhoven, NL;
ASML Holding N.V., Veldhoven, NL;
Abstract
A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.