The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jul. 08, 2009
Toru Maeda, Tokyo, JP;
Tetsuro Tanikawa, Tokyo, JP;
Akinobu Teramoto, Miyagi, JP;
Masaaki Oda, Chiba, JP;
Toru Maeda, Tokyo, JP;
Tetsuro Tanikawa, Tokyo, JP;
Akinobu Teramoto, Miyagi, JP;
Masaaki Oda, Chiba, JP;
Abstract
Metal nanoink () for bonding an electrode of a semiconductor die and an electrode of a substrate and/or bonding an electrode of a semiconductor die and an electrode of another semiconductor die by sintering under pressure is produced by injecting oxygen into an organic solvent () in the form of oxygen nanobubbles () or oxygen bubbles () either before or after metal nanoparticles () whose surfaces are coated with a dispersant () are mixed into the organic solvent (). Bumps are formed on the electrode of the semiconductor die and the electrode of the substrate by ejecting microdroplets of the metal nanoink () onto the electrodes, the semiconductor die is turned upside down and overlapped in alignment over the substrate, and then, the metal nanoparticles of the bumps are sintered under pressure by pressing and heating the bumps between the electrodes. As a result, generation of voids during sintering under pressure is minimized.