The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Jul. 30, 2010
Cheng-chi Lin, Toucheng Township, Yilan County, TW;
Wei-hsun Hsu, Banqiao, TW;
Shuo-lun Tu, Hsin-Chu, TW;
Shih-chin Lien, Sinjhuang, TW;
Chin-pen Yeh, Hsinchu, TW;
Cheng-Chi Lin, Toucheng Township, Yilan County, TW;
Wei-Hsun Hsu, Banqiao, TW;
Shuo-Lun Tu, Hsin-Chu, TW;
Shih-Chin Lien, Sinjhuang, TW;
Chin-Pen Yeh, Hsinchu, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A bipolar junction transistor (BJT) device including a base region, an emitter region and a collector region comprises a substrate, a deep well region in the substrate, a first well region in the deep well region to serve as the base region, a second well region in the deep well region to serve as the collector region, the second well region and the first well region forming a first junction therebetween, and a first doped region in the first well region to serve as the emitter region, the first doped region and the first well region forming a second junction therebetween, wherein the first doped region includes a first section extending in a first direction and a second section extending in a second direction different from the first direction, the first section and the second section being coupled with each other.