The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Nov. 20, 2009
Zhigang Chen, San Jose, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Walter R. Merry, Sunnyvale, CA (US);
Leonid Dorf, Santa Clara, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Zhigang Chen, San Jose, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Walter R. Merry, Sunnyvale, CA (US);
Leonid Dorf, Santa Clara, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.