The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Dec. 30, 2009
Yasuo Kato, Kanagawa, JP;
Jun Yashima, Kanagawa, JP;
Hiroshi Matsumoto, Shizuoka, JP;
Tomoo Motosugi, Shizuoka, JP;
Tomohiro Iijima, Shizuoka, JP;
Takayuki Abe, Kanagawa, JP;
Yasuo Kato, Kanagawa, JP;
Jun Yashima, Kanagawa, JP;
Hiroshi Matsumoto, Shizuoka, JP;
Tomoo Motosugi, Shizuoka, JP;
Tomohiro Iijima, Shizuoka, JP;
Takayuki Abe, Kanagawa, JP;
NuFlare Technology, Inc., Numazu-shi, JP;
Abstract
A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.