The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Apr. 16, 2010
Jeff J. Xu, Jhubei, TW;
Cheng-tung Lin, Jhudong Township, TW;
Hsiang-yi Wang, Hsinchu, TW;
Wen-chin Lee, Hsinchu, TW;
Betty Hsieh, Hsinchu, TW;
Jeff J. Xu, Jhubei, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Hsiang-Yi Wang, Hsinchu, TW;
Wen-Chin Lee, Hsinchu, TW;
Betty Hsieh, Hsinchu, TW;
Abstract
A gate-last method for forming a metal gate transistor is provided. The method includes forming an opening within a dielectric material over a substrate. A gate dielectric structure is formed within the opening and over the substrate. A work function metallic layer is formed within the opening and over the gate dielectric structure. A silicide structure is formed over the work function metallic layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile