The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Nov. 22, 2010
Shin-chi Chen, Tainan County, TW;
Yu-tsung Lai, Tainan County, TW;
Jiunn-hsiung Liao, Tainan County, TW;
Guang-yaw Hwang, Tainan County, TW;
Shin-Chi Chen, Tainan County, TW;
Yu-Tsung Lai, Tainan County, TW;
Jiunn-Hsiung Liao, Tainan County, TW;
Guang-Yaw Hwang, Tainan County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A dual damascene process is disclosed. The process includes the steps of: forming a dielectric layer on a substrate; forming a first patterned mask on the dielectric layer, wherein the first patterned mask comprises an opening; forming a material layer on the dielectric layer and covering the first patterned mask; forming a second patterned mask on the dielectric layer, wherein the second patterned mask comprises a first aperture; forming a second aperture in the second patterned mask, wherein the second aperture and the first aperture comprise a gap therebetween; and utilizing the second patterned mask as etching mask for partially removing the material layer and the dielectric layer through the first aperture and the second aperture.