The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jan. 06, 2011
Salman Akram, Boise, ID (US);
William Mark Hiatt, Eagle, ID (US);
Steve Oliver, Boise, ID (US);
Alan G. Wood, Boise, ID (US);
Sidney B. Rigg, Meridian, ID (US);
James M. Wark, Boise, ID (US);
Kyle K. Kirby, Boise, ID (US);
Salman Akram, Boise, ID (US);
William Mark Hiatt, Eagle, ID (US);
Steve Oliver, Boise, ID (US);
Alan G. Wood, Boise, ID (US);
Sidney B. Rigg, Meridian, ID (US);
James M. Wark, Boise, ID (US);
Kyle K. Kirby, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods for forming conductive vias include forming one or more via holes in a substrate. The via holes may be formed with a single mask, with protective layers, bond pads, or other features of the substrate acting as hard masks in the event that a photomask is removed during etching processes. The via holes may be configured to facilitate adhesion of a dielectric coating that includes a low-K dielectric material to the surfaces thereof. A barrier layer may be formed over surfaces of each via hole. A base layer, which may comprise a seed material, may be formed to facilitate the subsequent, selective deposition of conductive material over the surfaces of the via hole. The resulting semiconductor devices, intermediate structures, and assemblies and electronic devices that include the semiconductor devices that result from these methods are also disclosed.