The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2012

Filed:

Jan. 20, 2011
Applicants:

Henry Chien, San Jose, CA (US);

George Matamis, San Jose, CA (US);

Tuan Pham, San Jose, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Hidetaka Horiuchi, Nagoya, JP;

Jeffrey W. Lutze, San Jose, CA (US);

Nima Mokhlesi, Los Gatos, CA (US);

Yupin Kawing Fong, Fremont, CA (US);

Inventors:

Henry Chien, San Jose, CA (US);

George Matamis, San Jose, CA (US);

Tuan Pham, San Jose, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Hidetaka Horiuchi, Nagoya, JP;

Jeffrey W. Lutze, San Jose, CA (US);

Nima Mokhlesi, Los Gatos, CA (US);

Yupin Kawing Fong, Fremont, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures.


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