The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Dec. 15, 2009
Chang-hsiao Lee, Tainan County, TW;
Yu-tsung Lai, Tai-Chung Hsien, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Chang-Hsiao Lee, Tainan County, TW;
Yu-Tsung Lai, Tai-Chung Hsien, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of removing post-etch residues is provided. First, a substrate is provided. An isolation layer covers the substrate and a conductive layer is embedded in the isolation layer. A dielectric layer and a hard mask cover the isolation layer. Then, an etching process is performed, and a patterned hard mask is formed by etching the hard mask by ions or atoms. After that, a charge-removing process is performed by using a conductive solution to cleaning the patterned hard mask and the dielectric layer so as to remove the charges accumulated on the patterned hard mask and the dielectric layer during the etch process. Finally, the post-etch residues on the patterned hard mask and the dielectric layer is removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile