The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Aug. 01, 2007
Hiroshi Inazumachi, Funabashi, JP;
Mamoru Kosakai, Chiyoda-ku, JP;
Yukio Miura, Chiyoda-ku, JP;
Keigo Maki, Chiyoda-ku, JP;
Hiroshi Inazumachi, Funabashi, JP;
Mamoru Kosakai, Chiyoda-ku, JP;
Yukio Miura, Chiyoda-ku, JP;
Keigo Maki, Chiyoda-ku, JP;
Sumitomo Osaka Cement Co., Ltd., Chiyoda-ku, Tokyo, JP;
Abstract
An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device () including an electrostatic chuck section (), a metal base section () serving as a high-frequency generating electrode, and an insulating plate (). The electrostatic chuck section () is composed of a dielectric plate () whose top surface () serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (), an electrostatic-adsorption inner electrode (), and an insulating layer (). The electrostatic-adsorption inner electrode () is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10Ωcm but not more than 1.0×10Ωcm.