The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Feb. 21, 2007
Kensaku Narushima, Nirasaki, JP;
Satoshi Wakabayashi, Nirasaki, JP;
Kunihiro Tada, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A Ti film is formed on a surface of a wafer W placed inside a chamber, while injecting a process gas containing TiClgas into the chamberfrom a showerheadmade of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerheadat a temperature of 300° C. or more and less than 450° C., and setting TiClgas at a flow rate of 1 to 12 mL/min (sccm) or setting TiClgas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber, while setting the showerheadat a temperature of 200 to 300° C., and supplying ClFgas into the chamber