The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Mar. 26, 2009
Yao-sheng Lee, Tampa, FL (US);
Vaidyanathan Balasubramaniam, Albany, NY (US);
Masaru Nishino, Halfmoon, NY (US);
Kelvin Zin, Albany, NY (US);
Yao-Sheng Lee, Tampa, FL (US);
Vaidyanathan Balasubramaniam, Albany, NY (US);
Masaru Nishino, Halfmoon, NY (US);
Kelvin Zin, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of pattern etching a thin film on a substrate is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a dielectric layer formed on the substrate and a mask layer formed above the dielectric layer. A pattern is created in the mask layer, and the pattern is transferred from the mask layer to the dielectric layer by performing a plasma etching process. While transferring the pattern to the dielectric layer, the mask layer is substantially removed using the plasma etching process. The plasma etching process can use a process gas comprising a first gaseous component that etches the dielectric layer at a greater rate than the mask layer, and a second gaseous component that etches the dielectric layer at a lesser rate than the mask layer.