The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
May. 03, 2010
Kuan-chieh Huang, Hsinchu, TW;
Chih-jen Wu, Hsinchu, TW;
Chen-ming Huang, Hsinchu, TW;
Dun-nian Yaung, Taipei, TW;
An-chun Tu, Taipei, TW;
Kuan-Chieh Huang, Hsinchu, TW;
Chih-Jen Wu, Hsinchu, TW;
Chen-Ming Huang, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
An-Chun Tu, Taipei, TW;
Abstract
A method for performing a CMOS Image Sensor (CIS) silicide process is provided to reduce pixel contact resistance. In one embodiment, the method comprises forming a Resist Protect Oxide (RPO) layer on the CIS, forming a Contact Etch Stop Layer (CESL), forming an Inter-Layer Dielectric (ILD) layer, performing contact lithography/etching, performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at pixel contact hole area, performing contact filling, and defining the first metal layer. The Resist Protect Oxide (RPO) layer can be formed without using a photo mask of Cell Resist Protect Oxide (CIRPO) photolithography for pixel array and/or without silicide process at pixel array. The method can include implanting N+ or P+ for pixel contact plugs at the pixel contact hole area. The contact filling can comprise depositing contact glue plugs and performing Chemical Mechanical Polishing (CMP).