The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Sep. 23, 2011
Jun YE, Palo Alto, CA (US);
Yu Cao, Saratoga, CA (US);
Luoqi Chen, Saratoga, CA (US);
Hua-yu Liu, Palo Alto, CA (US);
Jun Ye, Palo Alto, CA (US);
Yu Cao, Saratoga, CA (US);
Luoqi Chen, Saratoga, CA (US);
Hua-Yu Liu, Palo Alto, CA (US);
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.