The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Oct. 28, 2009
Richard P. Volant, New Fairfield, CT (US);
Mukta G. Farooq, Hopewell Jct., NY (US);
Paul F. Findeis, Verbank, NY (US);
Kevin S. Petrarca, Newburgh, NY (US);
Richard P. Volant, New Fairfield, CT (US);
Mukta G. Farooq, Hopewell Jct., NY (US);
Paul F. Findeis, Verbank, NY (US);
Kevin S. Petrarca, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage. A method of fabricating such a TSV structure is also described.