The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2012

Filed:

Sep. 09, 2009
Applicants:

Yoshiaki Fukuzumi, Yokohama, JP;

Ryota Katsumata, Yokohama, JP;

Masaru Kito, Yokohama, JP;

Hiroyasu Tanaka, Tokyo, JP;

Masaru Kidoh, Komae, JP;

Yosuke Komori, Yokohama, JP;

Megumi Ishiduki, Yokohama, JP;

Akihiro Nitayama, Yokohama, JP;

Hideaki Aochi, Kawasaki, JP;

Hitoshi Ito, Yokkaichi, JP;

Yasuyuki Matsuoka, Yokohama, JP;

Inventors:

Yoshiaki Fukuzumi, Yokohama, JP;

Ryota Katsumata, Yokohama, JP;

Masaru Kito, Yokohama, JP;

Hiroyasu Tanaka, Tokyo, JP;

Masaru Kidoh, Komae, JP;

Yosuke Komori, Yokohama, JP;

Megumi Ishiduki, Yokohama, JP;

Akihiro Nitayama, Yokohama, JP;

Hideaki Aochi, Kawasaki, JP;

Hitoshi Ito, Yokkaichi, JP;

Yasuyuki Matsuoka, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction.


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