The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Sep. 29, 2009
Da-bai Jiang, Singapore, SG;
Ching-shu Lo, Singapore, SG;
Da-Bai Jiang, Singapore, SG;
Ching-Shu Lo, Singapore, SG;
United Microelectronics Corp., Hsinchu, TW;
Abstract
In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (ΔE) and a focus deviation (ΔF) are calculated by following equations:TCD+BCD=αΔ+(TCD+BCD)TCD−BCD=βHere, α, βand βare constants, ΔE=E−E, ΔF=F−F, E represents a real exposure dose, F represents a real exposure focus, Erepresents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, Frepresents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCDand BCDare theoretical values in case of Eand F.