The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Sep. 16, 2010
Che-hua Hsu, Hsinchu County, TW;
Shao-hua Hsu, Taoyuan County, TW;
Zhi-cheng Lee, Tainan, TW;
Cheng-guo Chen, Changhua County, TW;
Shin-chi Chen, Tainan County, TW;
Hung-ling Shih, Chiayi County, TW;
Hung-yi Wu, Keelung, TW;
Heng-ching Huang, Kaohsiung, TW;
Che-Hua Hsu, Hsinchu County, TW;
Shao-Hua Hsu, Taoyuan County, TW;
Zhi-Cheng Lee, Tainan, TW;
Cheng-Guo Chen, Changhua County, TW;
Shin-Chi Chen, Tainan County, TW;
Hung-Ling Shih, Chiayi County, TW;
Hung-Yi Wu, Keelung, TW;
Heng-Ching Huang, Kaohsiung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.