The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Jun. 11, 2010
Nobuyuki Nagayama, Nirasaki, JP;
Naoyuki Satoh, Nirasaki, JP;
Keiichi Nagakubo, Nirasaki, JP;
Kazuya Nagaseki, Nirasaki, JP;
Nobuyuki Nagayama, Nirasaki, JP;
Naoyuki Satoh, Nirasaki, JP;
Keiichi Nagakubo, Nirasaki, JP;
Kazuya Nagaseki, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.