The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Jun. 30, 2010
Applicants:

Ming-huan Tsai, Zhubei, TW;

Hui Ouyang, Chubei, TW;

Chun-fai Cheng, Hsinchu, TW;

Wei-han Fan, Hsin-Chu, TW;

Inventors:

Ming-Huan Tsai, Zhubei, TW;

Hui Ouyang, Chubei, TW;

Chun-Fai Cheng, Hsinchu, TW;

Wei-Han Fan, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a lightly doped source and drain (LDD) region that acts as an etch stop. The LDD region may act as an etch stop during an etching process implemented to form a recess in the substrate that defines a source and drain region of the device.


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Tsai, Ming-Huan. (2012). Method of manufacturing integrated circuit device with well controlled surface proximity (U.S. Patent No. 8216906). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8216906

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