The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Jun. 15, 2007
Yasuhiko Kojima, Nirasaki, JP;
Taro Ikeda, Nirasaki, JP;
Yasuhiko Kojima, Nirasaki, JP;
Taro Ikeda, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film) which absorbed water from the atmosphere, and a substrate (wafer W) having a trenchformed on such insulating film is placed in a processing chamber. The substrate is coated with a first base film (Ti film) made of a valve metal. The surface of the first film brought into contact with the insulating film is oxidized by the water discharged from the insulating layer, and a passivation filmis formed. The surface of the first base film is coated with a second base film made of nitride or carbide of the valve metal, and a copper filmis formed on the surface of the second base film by CVD by using a copper organic compound as a material.