The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Jan. 09, 2008
Alexander H. Nickel, Santa Clara, CA (US);
Allen L. Evans, Dripping Springs, TX (US);
Minh Quoc Tran, Milpitas, CA (US);
LU You, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Pei-yuan Gao, San Jose, CA (US);
William S. Brennan, Austin, TX (US);
Erik Wilson, Santa Clara, CA (US);
Sung Jin Kim, Palo Alto, CA (US);
Hieu Trung Pham, Santa Clara, CA (US);
Alexander H. Nickel, Santa Clara, CA (US);
Allen L. Evans, Dripping Springs, TX (US);
Minh Quoc Tran, Milpitas, CA (US);
Lu You, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Pei-Yuan Gao, San Jose, CA (US);
William S. Brennan, Austin, TX (US);
Erik Wilson, Santa Clara, CA (US);
Sung Jin Kim, Palo Alto, CA (US);
Hieu Trung Pham, Santa Clara, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% Nwith less than 10% H, performing planarization, performing in-situ low-H NHplasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.