The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
May. 20, 2011
Chih-hua Chen, Jhubei, TW;
Chen-shien Chen, Zhubei, TW;
Chen-cheng Kuo, Chu-Pei, TW;
Wen-wei Shen, Xinzhuang, TW;
Chih-Hua Chen, Jhubei, TW;
Chen-Shien Chen, Zhubei, TW;
Chen-Cheng Kuo, Chu-Pei, TW;
Wen-Wei Shen, Xinzhuang, TW;
Abstract
A method of forming a through silicon via (TSV) structure includes forming an interconnect pad over a substrate. An under layer is formed over the interconnect pad. A vertical conductive post is formed at least partially through the substrate. At least one dummy structure is formed at least partially through the under layer. A top pad is formed over the dummy structure and the vertical conductive post. The top pad covers a wider area than a cross section of the vertical conductive post. The interconnect pad is electrically connected to the top pad. The dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad.